Interactions between intrinsic defects and nitrogen/boron impurities in high-resistivity 4H SiC: Electron paramagnetic resonance study

Verfasser / Beitragende:
[V. Konovalov, M. Zvanut]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/5(2002-05-01), 351-355
Format:
Artikel (online)
ID: 471148490