Growth and doping of SiC-thin films on low-stress, amorphous Si3N4/Si substrates for robust microelectromechanical systems applications

Verfasser / Beitragende:
[L. Cheng, M. Pan, J. Scofield, A. Steckl]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/5(2002-05-01), 361-365
Format:
Artikel (online)
ID: 471148504