Effect of hydrogen etching and subsequent sacrificial thermal oxidation on morphology and composition of 4H-SiC surfaces

Verfasser / Beitragende:
[J. Wolan, B. Grayson, J. Kohlscheen, Y. Emirov, R. Schlaf, W. Swartz, S. Saddow]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/5(2002-05-01), 380-383
Format:
Artikel (online)
ID: 471148520