A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation

Verfasser / Beitragende:
[G. Katulka, K. Roe, J. Kolodzey, C. Swann, G. Desalvo, R. Clarke, G. Eldridge, R. Messham]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/5(2002-05-01), 346-350
Format:
Artikel (online)
ID: 471148601