Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1−xN capping layers

Verfasser / Beitragende:
[Th. Gessmann, Y. Li, E. Waldron, J. Graff, E. Schubert, J. Sheu]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/5(2002-05-01), 416-420
Format:
Artikel (online)
ID: 471148652