A study of the oxidation behavior and the postannealing effect in a graded SiGe/Si heterostructure

Verfasser / Beitragende:
[Y. Lim, J. Jeong, J. Lee, H. Kim, H. Shon, H. Kim, D. Moon]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/5(2002-05-01), 529-534
Format:
Artikel (online)
ID: 471148660