High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method

Verfasser / Beitragende:
[J. Jenny, St Müller, A. Powell, V. Tsvetkov, H. Hobgood, R. Glass, C. Carter Jr.]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/5(2002-05-01), 366-369
Format:
Artikel (online)
ID: 471148709