Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by ar-implantation-induced partial disordering

Verfasser / Beitragende:
[A. Polyakov, N. Smirnov, A. Govorkov, A. Shlensky, M. Mil'vidskii, S. Pearton, N. Faleev, V. Bublik, K. Chsherbatchev, A. Osinsky, P. Norris, V. Dravin, R. Wilson]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/5(2002-05-01), 384-390
Format:
Artikel (online)
ID: 471148741