High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors

Verfasser / Beitragende:
[B. Luo, J. Johnson, F. Ren, K. Allums, C. Abernathy, S. Pearton, R. Dwivedi, T. Fogarty, R. Wilkins, A. Dabiran, A. Wowchack, C. Polley, P. Chow, A. Baca]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/5(2002-05-01), 437-441
Format:
Artikel (online)
ID: 471148830