InP-based AllnAs/GaAs0.51Sb0.49/GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applications

Verfasser / Beitragende:
[Changhyun Yi, Tong-Ho Kim, April Brown]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/2(2002-02-01), 95-98
Format:
Artikel (online)
ID: 471148849