Mathematical modeling for chemical vapor deposition in a single-wafer reactor: Application to low-pressure deposition of Tungsten

Verfasser / Beitragende:
[Jung-Hwan Park]
Ort, Verlag, Jahr:
2002
Enthalten in:
Korean Journal of Chemical Engineering, 19/3(2002-05-01), 391-399
Format:
Artikel (online)
ID: 471152730