caa a22 4500 475776011 CHVBK 20180406123631.0 cr unu---uuuuu 170329e20000501xx s 000 0 eng 10.1007/BF02465303 doi (NATIONALLICENCE)springer-10.1007/BF02465303 Yakovlev V. aut Boundaries of the initial melted area of a semiconductor film formed by floating-zone melting [Elektronische Daten] [V. Yakovlev] Stationary hydrodynamic and temperature fields near the upper triple point of the floating-zone melting process are analyzed. Regularities determining the angular position and shape of the initial melted area as functions of thermal conditions on solid and liquid surfaces in the immediate vicinity of the triple point are established in the form of four analytical relations. Kluwer Academic/Plenum Publishing, 2000 Journal of Applied Mechanics and Technical Physics Kluwer Academic Publishers-Plenum Publishers 41/3(2000-05-01), 504-512 0021-8944 41:3<504 2000 41 10808 https://doi.org/10.1007/BF02465303 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02465303 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Yakovlev V. aut NATIONALLICENCE 773 0- Journal of Applied Mechanics and Technical Physics Kluwer Academic Publishers-Plenum Publishers 41/3(2000-05-01), 504-512 0021-8944 41:3<504 2000 41 10808 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer