caa a22 4500 47579186X CHVBK 20180406123713.0 cr unu---uuuuu 170329e20001101xx s 000 0 eng 10.1007/s005420000058 doi (NATIONALLICENCE)springer-10.1007/s005420000058 Fabrication of sub-micron structures for MEMS using deep X-ray lithography [Elektronische Daten] [H. Ueno, Y. Zhang, N. Nishi, S. Sugiyama] Fabrication techniques of microstructures with high resolution and high aspect ratio are necessary for practical microelectromechanical systems (MEMS) that have high performance and integration. In order to fabricate microstructures with sub-micron resolution and high aspect ratio, deep X-ray lithography has been investigated using the compact synchrotron radiation (SR) light source called "AURORA”. An X-ray mask for sub-micron deep X-ray lithography, which is composed of 1 μm thick Au as absorbers, 2 μm thick SiC as a membrane and 625 μm thick Si as a frame, was designed. In preliminary experiments, the following results were achieved: EB resist microstructures with an aspect ratio of 22 corresponding with 0.07 μm width and 1.3 μm height were formed; a 10 μm thick PMMA resist containing no warp was formed by direct polymerization, enabling more precise gap control. Springer-Verlag Berlin Heidelberg, 2000 Ueno H. Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525, Japan e-mail: sme20034@se.ritsumei.ac.jp Tel/fax: +81-77-561-2845, JP aut Zhang Y. Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525, Japan e-mail: sme20034@se.ritsumei.ac.jp Tel/fax: +81-77-561-2845, JP aut Nishi N. Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525, Japan e-mail: sme20034@se.ritsumei.ac.jp Tel/fax: +81-77-561-2845, JP aut Sugiyama S. Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525, Japan e-mail: sme20034@se.ritsumei.ac.jp Tel/fax: +81-77-561-2845, JP aut https://doi.org/10.1007/s005420000058 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s005420000058 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ueno H. Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525, Japan e-mail: sme20034@se.ritsumei.ac.jp Tel/fax: +81-77-561-2845, JP aut NATIONALLICENCE 700 1- Zhang Y. Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525, Japan e-mail: sme20034@se.ritsumei.ac.jp Tel/fax: +81-77-561-2845, JP aut NATIONALLICENCE 700 1- Nishi N. Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525, Japan e-mail: sme20034@se.ritsumei.ac.jp Tel/fax: +81-77-561-2845, JP aut NATIONALLICENCE 700 1- Sugiyama S. Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525, Japan e-mail: sme20034@se.ritsumei.ac.jp Tel/fax: +81-77-561-2845, JP aut Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer