caa a22 4500 475791916 CHVBK 20180406123713.0 cr unu---uuuuu 170329e20000201xx s 000 0 eng 10.1007/s005420050003 doi (NATIONALLICENCE)springer-10.1007/s005420050003 Improvement of sidewall roughness in deep silicon etching [Elektronische Daten] [M. Chabloz, Y. Sakai, T. Matsuura, K. Tsutsumi] The recently developed High Aspect Ratio Si Etch (HARSE) process is widely used for applications requiring silicon structures with high aspect ratios. This process relies on the alternation of sidewall passivation and silicon etching phases and enables the obtainment of high silicon etch rates and highly anisotropic profiles. This paper reports an innovative approach to improve the sidewall roughness through a multiple-step HARSE process using an ICP system. Unlike the standard HARSE process, the etching conditions for this new process are gradually altered in order to reinforce the silicon etch efficiency as a function of the silicon depth previously etched. Trenches with aspect ratios as high as 40 can be achieved. The sidewall roughness along the entire etching depth is less than 8 nm rms. In comparison with the standard HARSE process in which ripples appear on the trenches sidewall, the sidewall roughness is improved by a factor of 4. Springer-Verlag Berlin Heidelberg, 2000 Chabloz M. Mitsubishi Electric Corporation, Advanced Technology R&D Center 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan, JP aut Sakai Y. Mitsubishi Electric Corporation, Advanced Technology R&D Center 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan, JP aut Matsuura T. Mitsubishi Electric Corporation, Advanced Technology R&D Center 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan, JP aut Tsutsumi K. Mitsubishi Electric Corporation, Advanced Technology R&D Center 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan, JP aut https://doi.org/10.1007/s005420050003 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s005420050003 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chabloz M. Mitsubishi Electric Corporation, Advanced Technology R&D Center 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan, JP aut NATIONALLICENCE 700 1- Sakai Y. Mitsubishi Electric Corporation, Advanced Technology R&D Center 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan, JP aut NATIONALLICENCE 700 1- Matsuura T. Mitsubishi Electric Corporation, Advanced Technology R&D Center 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan, JP aut NATIONALLICENCE 700 1- Tsutsumi K. Mitsubishi Electric Corporation, Advanced Technology R&D Center 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan, JP aut Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer