caa a22 4500 475791932 CHVBK 20180406123713.0 cr unu---uuuuu 170329e20000201xx s 000 0 eng 10.1007/s005420050008 doi (NATIONALLICENCE)springer-10.1007/s005420050008 High aspect ratio silicon trench fabrication by inductively coupled plasma [Elektronische Daten] [C. K. Chung, H. C. Lu, T. H. Jaw] Very high aspect ratio silicon trench with nearly vertical sidewall profile had been demonstrated by inductively coupled plasma (ICP) etching. This silicon trench with aspect ratio more than 30 and vertical sidewall were basically fabricated by STS ASETM technology and controlled at proper process parameters. We controlled the appropriate platen power and reaction gas to solve the problem of more positive profile at high aspect ratio trench and avoid the bowing formation on the sidewall simultaneously. Different feature sizes for silicon trench were designed to study the aspect ratio dependent etching properties. The 2.2 μm wide trench etched had aspect ratio of 33 and etching rate of 1.8 μm/min while the 5.0 μm wide trench had aspect ratio of 20 and etching rate of 2.5 μm/min. Springer-Verlag Berlin Heidelberg, 2000 Chung C. K. Microsystems Laboratory, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan, ROC, TW aut Lu H. C. Microsystems Laboratory, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan, ROC, TW aut Jaw T. H. Microsystems Laboratory, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan, ROC, TW aut https://doi.org/10.1007/s005420050008 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s005420050008 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chung C. K. Microsystems Laboratory, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan, ROC, TW aut NATIONALLICENCE 700 1- Lu H. C. Microsystems Laboratory, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan, ROC, TW aut NATIONALLICENCE 700 1- Jaw T. H. Microsystems Laboratory, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan, ROC, TW aut Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer