caa a22 4500 475792025 CHVBK 20180406123713.0 cr unu---uuuuu 170329e20000401xx s 000 0 eng 10.1007/s005420050183 doi (NATIONALLICENCE)springer-10.1007/s005420050183 Etching through silicon wafer in inductively coupled plasma [Elektronische Daten] [S. Franssila, J. Kiihamäki, J. Karttunen]  Inductively coupled plasma reactor (ICP) has been used to etch holes, trenches and other shapes completely through 380 and 525 μm thick silicon wafers. Bosch/STS process of gas flow pulsing with SF6 etch step and C4F8 sidewall passivation step was employed. Etch rate reduction due to aspect ratio dependence and pattern size and shape effects have been explored. Etch stop has been studied both on bulk and SOI wafers. Notching effect was observed for high aspect ratio features but it was absent in large, low aspect ratio features. Aluminum etch stop layer has been shown to eliminate notching. Springer-Verlag Berlin Heidelberg, 2000 Franssila S. Helsinki University of Technology, Microelectronics Centre, PO Box 3000, Fin-02015 TKK, Finland, FI aut Kiihamäki J. VTT Microelectronics Centre, PO Box 1101, FIN-02044 VTT, Finland, FI aut Karttunen J. VTT Microelectronics Centre, PO Box 1101, FIN-02044 VTT, Finland, FI aut https://doi.org/10.1007/s005420050183 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s005420050183 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Franssila S. Helsinki University of Technology, Microelectronics Centre, PO Box 3000, Fin-02015 TKK, Finland, FI aut NATIONALLICENCE 700 1- Kiihamäki J. VTT Microelectronics Centre, PO Box 1101, FIN-02044 VTT, Finland, FI aut NATIONALLICENCE 700 1- Karttunen J. VTT Microelectronics Centre, PO Box 1101, FIN-02044 VTT, Finland, FI aut Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer