caa a22 4500 475809351 CHVBK 20180406123755.0 cr unu---uuuuu 170329e20000501xx s 000 0 eng 10.1007/BF02503657 doi (NATIONALLICENCE)springer-10.1007/BF02503657 Scanning photoluminescence of GaAlAs/GaAs/GaAlAs binary heterostructure [Elektronische Daten] [V. Lakhov, V. Mityukhlyaev, A. Pravdivtsev, P. Todua, V. Faifer] It is shown that in mapping the photoluminescence characteristics of an active GaAlAs/GaAs/GaAlAs binary heterostructure layer, interference effects in the upper GaAlAs layer must be taken into account. For correct measurement in the integrated photoluminescence mode, the photoluminescence intensity must be normalized for the transparency of the upper layer at the wavelength of the incident light. Kluwer Academic/Plenum Publishers, 2000 Lakhov V. aut Mityukhlyaev V. aut Pravdivtsev A. aut Todua P. aut Faifer V. aut Measurement Techniques Kluwer Academic Publishers-Plenum Publishers 43/5(2000-05-01), 422-424 0543-1972 43:5<422 2000 43 11018 https://doi.org/10.1007/BF02503657 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02503657 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lakhov V. aut NATIONALLICENCE 700 1- Mityukhlyaev V. aut NATIONALLICENCE 700 1- Pravdivtsev A. aut NATIONALLICENCE 700 1- Todua P. aut NATIONALLICENCE 700 1- Faifer V. aut NATIONALLICENCE 773 0- Measurement Techniques Kluwer Academic Publishers-Plenum Publishers 43/5(2000-05-01), 422-424 0543-1972 43:5<422 2000 43 11018 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer