caa a22 4500 475821246 CHVBK 20180406123819.0 cr unu---uuuuu 170329e20000101xx s 000 0 eng 10.1007/BF02513009 doi (NATIONALLICENCE)springer-10.1007/BF02513009 Impurity-induced breakdown under interband illumination [Elektronische Daten] [V. Dzhakeli, Z. Kachlishvili, N. Mateshvili] Impurity-induced breakdown under interband illumination is considered with allowance for charge-carrier recombination through the neural impurity centers. The results of numerical modeling demonstrate that the interband illumination significantly affects the VAC shape, increases the breakdown field, and causes the N-shaped characteristics for high degrees of compensation. It is found that the concentration photosensitivity reaches its maximum in the breakdown region, which is caused by the maximum lifetime of charge carriers. Kluwer Academic/Plenum Publishers, 2000 Dzhakeli V. aut Kachlishvili Z. aut Mateshvili N. aut Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 43/1(2000-01-01), 52-55 1064-8887 43:1<52 2000 43 11182 https://doi.org/10.1007/BF02513009 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02513009 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Dzhakeli V. aut NATIONALLICENCE 700 1- Kachlishvili Z. aut NATIONALLICENCE 700 1- Mateshvili N. aut NATIONALLICENCE 773 0- Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 43/1(2000-01-01), 52-55 1064-8887 43:1<52 2000 43 11182 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer