caa a22 4500 475821327 CHVBK 20180406123819.0 cr unu---uuuuu 170329e20000101xx s 000 0 eng 10.1007/BF02513007 doi (NATIONALLICENCE)springer-10.1007/BF02513007 Measuring the electrical conductivity and the hall coefficient for semiconductor structures inhomogeneous with depth [Elektronische Daten] [N. Polyakov, V. Oleinikov] The well-known four-point probe method of combined measurements of electrical conductivity and the Hall coefficient of semiconductor layers is developed further in the present work. Formulas are derived that allow the electrical conductivity and the Hall coefficient to be averaged over layers inhomogeneous with depth. Analytical expressions for calculating correction factors for this measurement method are obtained, and practical recommendations for their calculation on a computer are also given. Kluwer Academic/Plenum Publishers, 2000 Polyakov N. aut Oleinikov V. aut Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 43/1(2000-01-01), 40-45 1064-8887 43:1<40 2000 43 11182 https://doi.org/10.1007/BF02513007 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02513007 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Polyakov N. aut NATIONALLICENCE 700 1- Oleinikov V. aut NATIONALLICENCE 773 0- Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 43/1(2000-01-01), 40-45 1064-8887 43:1<40 2000 43 11182 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer