caa a22 4500 475821645 CHVBK 20180406123820.0 cr unu---uuuuu 170329e20000901xx s 000 0 eng 10.1023/A:1009475818995 doi (NATIONALLICENCE)springer-10.1023/A:1009475818995 Sukhanov Ya Peter the Great Military Academy of Strategic Rocket Forces, Russia aut Changes in Semiconductor Prorerties under Laser Irradiation [Elektronische Daten] [Ya. Sukhanov] The effect of laser exposure on semiconducting materials is studied. Using experimental data processing for silicon as an example, moderate laser fluxes (<106 W/cm-2) are shown to cause a sharp increase in the absorption coefficient of the surface semiconducting layer. Plenum Publishing Corporation, 2000 Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 43/9(2000-09-01), 743-746 1064-8887 43:9<743 2000 43 11182 https://doi.org/10.1023/A:1009475818995 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1023/A:1009475818995 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Sukhanov Ya Peter the Great Military Academy of Strategic Rocket Forces, Russia aut NATIONALLICENCE 773 0- Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 43/9(2000-09-01), 743-746 1064-8887 43:9<743 2000 43 11182 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer