caa a22 4500 475821742 CHVBK 20180406123820.0 cr unu---uuuuu 170329e20000701xx s 000 0 eng 10.1007/BF02508960 doi (NATIONALLICENCE)springer-10.1007/BF02508960 Charge transfer mechanism in high-purity silicon-based n +-π- p + structures [Elektronische Daten] [V. Gaman, P. Drobot] Results of experimental investigations into current-voltage characteristics of n+-π-p+ structures based on high-purity silicon doped with boron are presented. It is shown that the I-V characteristic at high injection levels is described by Stafeev's theory, when the thickness d of the π-region is smaller than or close to three ambipolar diffusion lengths La. For a current density J above (3-50) A/cm2 at varying temperatures, the I-V characteristic obeys a relation usually occurring in the case where charge-carrier recombination in the n+ and p+-regions dominates that found in the π-region. The effect of mutual electron-hole scattering on the behavior of the I-V characteristic is evident at J>630 A/cm3. For d/La=9, the I-V characteristic at high injection levels is treated by the theory of double carrier injection into a semiconductor with consideration for diffusion corrections. In the temperature range below 200-276 K, the I-V curve for all samples studied exhibits a linear dependence on J followed by a portion corresponding to a maximum occupancy of recombination levels by injected electrons. Here the Fe or Au donor levels presumably act as recombination levels. The electron and hole capture areas (cross sections) by recombination centers are roughly estimated. Kluwer Academic/Plenum Publishers, 2000 Gaman V. aut Drobot P. aut Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 43/7(2000-07-01), 558-567 1064-8887 43:7<558 2000 43 11182 https://doi.org/10.1007/BF02508960 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02508960 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Gaman V. aut NATIONALLICENCE 700 1- Drobot P. aut NATIONALLICENCE 773 0- Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 43/7(2000-07-01), 558-567 1064-8887 43:7<558 2000 43 11182 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer