caa a22 4500 475821785 CHVBK 20180406123820.0 cr unu---uuuuu 170329e20000701xx s 000 0 eng 10.1007/BF02508957 doi (NATIONALLICENCE)springer-10.1007/BF02508957 Sokolovskii B. aut Features of the reverse current of a semiconductor diode with an isotypic heterojunction in the base region [Elektronische Daten] [B. Sokolovskii] The reverse current of a semiconductor diode with an isotype heterojunction in the base region with the wideband part of the junction adjoining the ohmic contact has been calculated. The dependence of the reverse current on the heterojunction position and parameters has been revealed and analyzed. It has been shown for such a diode that the reverse current associated with thermal generation of charge carriers both in the base region and at the contact can be reduced substantially. Kluwer Academic/Plenum Publishers, 2000 Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 43/7(2000-07-01), 542-546 1064-8887 43:7<542 2000 43 11182 https://doi.org/10.1007/BF02508957 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02508957 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Sokolovskii B. aut NATIONALLICENCE 773 0- Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 43/7(2000-07-01), 542-546 1064-8887 43:7<542 2000 43 11182 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer