caa a22 4500 475821831 CHVBK 20180406123820.0 cr unu---uuuuu 170329e20001201xx s 000 0 eng 10.1023/A:1011355730528 doi (NATIONALLICENCE)springer-10.1023/A:1011355730528 GaAs Electron Spectrum with Antisite AsGa Defect Clusters in the Semiempirical Tight-Binding Method [Elektronische Daten] [V. Chaldyshev, A. Pomogaeva] A computational procedure for calculating the band structure of a crystal with antisite-defect clusters is developed using a large unit-cell method. GaAs electron spectra containing clusters of more than 100 As atoms characterized by crystal point-group symmetry are calculated. The spread of energy levels in the band gap is examined. The origin of these energy levels is interpreted as being the result of splitting of energy levels of single defects. Plenum Publishing Corporation, 2000 Chaldyshev V. Tomsk State University, Russia aut Pomogaeva A. Tomsk State University, Russia aut Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 43/12(2000-12-01), 1013-1019 1064-8887 43:12<1013 2000 43 11182 https://doi.org/10.1023/A:1011355730528 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1023/A:1011355730528 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chaldyshev V. Tomsk State University, Russia aut NATIONALLICENCE 700 1- Pomogaeva A. Tomsk State University, Russia aut NATIONALLICENCE 773 0- Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 43/12(2000-12-01), 1013-1019 1064-8887 43:12<1013 2000 43 11182 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer