caa a22 4500 475822005 CHVBK 20180406123821.0 cr unu---uuuuu 170329e20000301xx s 000 0 eng 10.1007/BF02509613 doi (NATIONALLICENCE)springer-10.1007/BF02509613 Radiation-induced defects and their complexes in ion-irradiated thermostable dielectrics [Elektronische Daten] [A. Kabyshev, F. Konusov, V. Lopatin] The parameters of defects of radiation-induced and biographic types and of their complexes in boron nitride andAl 2O3 mono- and polycrystals after ion and thermal modification are investigated invoking the methods of optical and thermoactivation spectroscopy. The influence of electron transitions involving defect energy levels on changes in the electrophysical and optical properties of modified dielectrics is recognized. The contribution of the forbidden band width and of the material structure to changes in the properties of defect clusters with continuous spectra of energy levels and of separate radiation-induced point-type defects with local energy levels is evaluated. The stability of defects with various energy spectra under thermal, field, and photoexcitation and also after heat treatment in air is evaluated. The most probable nature of vacancy and impurity-vacancy defects and of vacancy complexes is understood. Kluwer Academic/Plenum Publishers, 2000 Kabyshev A. aut Konusov F. aut Lopatin V. aut Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 43/3(2000-03-01), 241-249 1064-8887 43:3<241 2000 43 11182 https://doi.org/10.1007/BF02509613 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02509613 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kabyshev A. aut NATIONALLICENCE 700 1- Konusov F. aut NATIONALLICENCE 700 1- Lopatin V. aut NATIONALLICENCE 773 0- Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 43/3(2000-03-01), 241-249 1064-8887 43:3<241 2000 43 11182 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer