caa a22 4500 475822129 CHVBK 20180406123821.0 cr unu---uuuuu 170329e20001001xx s 000 0 eng 10.1023/A:1009476531833 doi (NATIONALLICENCE)springer-10.1023/A:1009476531833 The Effect of Flow Ratio between Elements of Groups III and V on the Structure and Properties of InGaAs Layers Grown by Low-Temperature Molecular-Beam Epitaxy [Elektronische Daten] [B. Bobrovnikova, M. Vilisova, I. Ivonin, L. Lavrent'yeva, V. Preobrazhenskii, M. Putyato, B. Semyagin, S. Subach] InGaAs layers grown by low-temperature molecular-beam epitaxy on InP substrates at variable flow ratios between elements of groups III and V are investigated. Layers with a defect structure and low electrophysical parameters are shown to grow with an excess of the components of group III. Growth with high As flows gives rise to trapping of excess arsenic and generation of point defects (AsIII antistructural defects and VIII vacancies). High-quality InGaAs layers at low growth temperatures are produced under near-stoichiometric conditions (V/III = 1-4). Plenum Publishing Corporation, 2000 Bobrovnikova B. Siberian Physicotechnical Institute, Tomsk State University, Russia aut Vilisova M. Siberian Physicotechnical Institute, Tomsk State University, Russia aut Ivonin I. Siberian Physicotechnical Institute, Tomsk State University, Russia aut Lavrent'yeva L. Tomsk State University, Russia aut Preobrazhenskii V. Institute of Semiconductor Physics of Siberian Branch, Russian Academy of Sciences, Russia aut Putyato M. Institute of Semiconductor Physics of Siberian Branch, Russian Academy of Sciences, Russia aut Semyagin B. Institute of Semiconductor Physics of Siberian Branch, Russian Academy of Sciences, Russia aut Subach S. Siberian Physicotechnical Institute, Tomsk State University, Russia aut Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 43/10(2000-10-01), 816-820 1064-8887 43:10<816 2000 43 11182 https://doi.org/10.1023/A:1009476531833 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1023/A:1009476531833 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Bobrovnikova B. Siberian Physicotechnical Institute, Tomsk State University, Russia aut NATIONALLICENCE 700 1- Vilisova M. Siberian Physicotechnical Institute, Tomsk State University, Russia aut NATIONALLICENCE 700 1- Ivonin I. Siberian Physicotechnical Institute, Tomsk State University, Russia aut NATIONALLICENCE 700 1- Lavrent'yeva L. Tomsk State University, Russia aut NATIONALLICENCE 700 1- Preobrazhenskii V. Institute of Semiconductor Physics of Siberian Branch, Russian Academy of Sciences, Russia aut NATIONALLICENCE 700 1- Putyato M. Institute of Semiconductor Physics of Siberian Branch, Russian Academy of Sciences, Russia aut NATIONALLICENCE 700 1- Semyagin B. Institute of Semiconductor Physics of Siberian Branch, Russian Academy of Sciences, Russia aut NATIONALLICENCE 700 1- Subach S. Siberian Physicotechnical Institute, Tomsk State University, Russia aut NATIONALLICENCE 773 0- Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 43/10(2000-10-01), 816-820 1064-8887 43:10<816 2000 43 11182 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer