caa a22 4500 477058647 CHVBK 20180405111353.0 cr unu---uuuuu 170330e19960101xx s 000 0 eng 10.1007/BF02069252 doi (NATIONALLICENCE)springer-10.1007/BF02069252 Electron microscope studies of the influence of electrons with subthreshold energies on the formation and annealing of structural defects in ZnTe and CdZnTe [Elektronische Daten] [Yu. Loginov, G. Lu] The influence of subthreshold-energy electrons on the formation and annealing of structural defects in ZnTe and on the annealing of dislocation loops preinjected in the sample by bombardment with argon ions is investigated by transmission electron microscopy. The final form and density of structural defects formed after electron irradiation is observed to depend on the total electron flux, whereas the rate of formation of defects and annealing of dislocation loops increases linearly with the intensity of electron irradiation. A comparison is drawn with CdZnTe, Si, and GaAs irradiated under similar conditions. The results are attributed to subthreshold defect nucleation mechanisms. Plenum Publishing Corporation, 1996 Loginov Yu State University, Krasnoyarsk aut Lu G. State University, Krasnoyarsk aut Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 39/1(1996-01-01), 102-106 1064-8887 39:1<102 1996 39 11182 https://doi.org/10.1007/BF02069252 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02069252 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Loginov Yu State University, Krasnoyarsk aut NATIONALLICENCE 700 1- Lu G. State University, Krasnoyarsk aut NATIONALLICENCE 773 0- Russian Physics Journal Kluwer Academic Publishers-Plenum Publishers 39/1(1996-01-01), 102-106 1064-8887 39:1<102 1996 39 11182 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer