caa a22 4500 477059597 CHVBK 20180405111356.0 cr unu---uuuuu 170330e19961001xx s 000 0 eng 10.1007/BF02437136 doi (NATIONALLICENCE)springer-10.1007/BF02437136 Dislocational analog of the nernst-ettinghausen transverse effect in ionic crystals with two types of mobile point defects [Elektronische Daten] [S. Gestrin, A. Sal'nikov, E. Struleva] The Nernst-Ettinghausen effect in ionic crystals with two types of mobile point defects is investigated. Expressions are obtained for the dipole moment of the crystal and the potential difference between the faces of the crystal. Plenum Publishing Corporation, 1997 Gestrin S. aut Sal'nikov A. aut Struleva E. aut Russian Physics Journal Kluwer Academic Publishers-Consultants Bureau 39/10(1996-10-01), 934-937 1064-8887 39:10<934 1996 39 11182 https://doi.org/10.1007/BF02437136 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02437136 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Gestrin S. aut NATIONALLICENCE 700 1- Sal'nikov A. aut NATIONALLICENCE 700 1- Struleva E. aut NATIONALLICENCE 773 0- Russian Physics Journal Kluwer Academic Publishers-Consultants Bureau 39/10(1996-10-01), 934-937 1064-8887 39:10<934 1996 39 11182 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer