caa a22 4500 477059929 CHVBK 20180405111357.0 cr unu---uuuuu 170330e19960801xx s 000 0 eng 10.1007/BF02437079 doi (NATIONALLICENCE)springer-10.1007/BF02437079 Davydov V. aut Photoelectric properties and photoinduced changes in an n -GaAs-glass-metal structure [Elektronische Daten] [V. Davydov] A study is made of the photoelectric properties of metal-insulator-semiconductor (MIS) structures ofn-GaAs with a V2O5−B2O3−CaO insulating layer before and after illumination with subthreshold radiation. It is suggested that these properties are formed on account of the combined action of the barrier photo-emf and the Dember photo-emf dominating at low and high frequencies. The changes discovered in the photoelectric and noise properties of the structures are explained by the occurrence of photoinduced transformations in the ensemble of semiconductor defects. This is confirmed by a metallographic investigation. It is noted that the characteristics of photoinduced changes in crystalline and amorphous systems have common features. Plenum Publishing Corporation, 1997 Russian Physics Journal Kluwer Academic Publishers-Consultants Bureau 39/8(1996-08-01), 706-711 1064-8887 39:8<706 1996 39 11182 https://doi.org/10.1007/BF02437079 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02437079 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Davydov V. aut NATIONALLICENCE 773 0- Russian Physics Journal Kluwer Academic Publishers-Consultants Bureau 39/8(1996-08-01), 706-711 1064-8887 39:8<706 1996 39 11182 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer