caa a22 4500 477060072 CHVBK 20180405111357.0 cr unu---uuuuu 170330e19960501xx s 000 0 eng 10.1007/BF02436775 doi (NATIONALLICENCE)springer-10.1007/BF02436775 Optical parameters and photoluminescence of cadmium-doped epitaxial Pb1−xSnxTe films [Elektronische Daten] [A. Bakhtinov, V. Vodop'yanov, M. Kondratenko] Barium fluoride (111) cleaved surfaces have been used with the hot-wall method to grow epitaxial Pb1−xSnxTe films from source materials either undoped or doped with 0.1, 0.5, or 1 at. % cadmium and having x=0.2. The absorption in the wavelength range 2-13 μm has been measured together with the spectral dependence of the photoluminescence. The cadmium affects the optical width of the forbidden band and the high-frequency dielectric constant, as well as the photoluminescence intensity. The optical absorption spectra of the doped epitaxial films contain additional absorption bands due to the impurity level in the forbidden band. The position of the impurity level has been determined and the shift in it relative to the bottom of the conduction band as the temperature is reduced. Plenum Publishing Corporation, 1996 Bakhtinov A. aut Vodop'yanov V. aut Kondratenko M. aut Russian Physics Journal Kluwer Academic Publishers-Consultants Bureau 39/5(1996-05-01), 400-402 1064-8887 39:5<400 1996 39 11182 https://doi.org/10.1007/BF02436775 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02436775 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Bakhtinov A. aut NATIONALLICENCE 700 1- Vodop'yanov V. aut NATIONALLICENCE 700 1- Kondratenko M. aut NATIONALLICENCE 773 0- Russian Physics Journal Kluwer Academic Publishers-Consultants Bureau 39/5(1996-05-01), 400-402 1064-8887 39:5<400 1996 39 11182 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer