caa a22 4500 477060137 CHVBK 20180405111357.0 cr unu---uuuuu 170330e19960501xx s 000 0 eng 10.1007/BF02436781 doi (NATIONALLICENCE)springer-10.1007/BF02436781 Effect of tungsten film on electro-physical properties of silicon after annealing at 1100°C [Elektronische Daten] [G. Voronkova, V. Zuev, A. Kiryukhin, K. Yakubovskii] We investigated changes in the bulk electro-physical properties of crucibleless silicon after repeated annealing at 1100°C both with and without a tungsten film on the surface. We observed much less change in the resistivity of samples with tungsten films than in those with no films. We observed a significant (about a factor of 10) reduction in the photoresponse decay time, and an increase in the spectral band in which there is a photocurrent as compared with the uncoated samples. The photoconductivity as a function of temperature exhibits a power-law dependence, with β1=(1.75±0.06) and β2=(0.20±0.03) for coated and uncoated samples. The change in the relaxation time of the stationary photoconductivity of coated samples is a nonmonotonic function of the intensity of the uniform illumination. Plenum Publishing Corporation, 1996 Voronkova G. aut Zuev V. aut Kiryukhin A. aut Yakubovskii K. aut Russian Physics Journal Kluwer Academic Publishers-Consultants Bureau 39/5(1996-05-01), 430-434 1064-8887 39:5<430 1996 39 11182 https://doi.org/10.1007/BF02436781 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02436781 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Voronkova G. aut NATIONALLICENCE 700 1- Zuev V. aut NATIONALLICENCE 700 1- Kiryukhin A. aut NATIONALLICENCE 700 1- Yakubovskii K. aut NATIONALLICENCE 773 0- Russian Physics Journal Kluwer Academic Publishers-Consultants Bureau 39/5(1996-05-01), 430-434 1064-8887 39:5<430 1996 39 11182 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer