caa a22 4500 477060153 CHVBK 20180405111357.0 cr unu---uuuuu 170330e19960501xx s 000 0 eng 10.1007/BF02436779 doi (NATIONALLICENCE)springer-10.1007/BF02436779 Salient features of the electrical characteristics of oxygen-implanted gallium arsenide Schottky-barrier structures [Elektronische Daten] [N. Maksimova, N. Filonov] We have studied the deep levels in gallium arsenide implanted with oxygen ions at a low dose of 2·1010 cm−2 and the influence of those levels on the current-voltage characteristics of Ni/Pd/Ga Schottky-barrier structures. The deep levels were checked by the thermally-stimulated-current (TSC) method. The number of peaks on the TSC curves and their amplitudes are shown to depend on the oxygen-ion energy and the temperature of the post-implantation anneal. An important role in the formation of centers associated with oxygen is played by gallium diffusion into the protective SiO2/Si3N4 insulator layer as well as by elastic and plastic strain phenomena that occur during deposition of the coating and post-implantation annealing of the specimens. The deep levels due to oxygen are responsible for the appearance of excess currents resulting from recombination as well as for ohmic leakages. Plenum Publishing Corporation, 1996 Maksimova N. aut Filonov N. aut Russian Physics Journal Kluwer Academic Publishers-Consultants Bureau 39/5(1996-05-01), 419-424 1064-8887 39:5<419 1996 39 11182 https://doi.org/10.1007/BF02436779 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02436779 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Maksimova N. aut NATIONALLICENCE 700 1- Filonov N. aut NATIONALLICENCE 773 0- Russian Physics Journal Kluwer Academic Publishers-Consultants Bureau 39/5(1996-05-01), 419-424 1064-8887 39:5<419 1996 39 11182 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer