caa a22 4500 477075142 CHVBK 20180405111437.0 cr unu---uuuuu 170330e19960301xx s 000 0 eng 10.1007/BF02827582 doi (NATIONALLICENCE)springer-10.1007/BF02827582 The effects by γ ray irradiation on silicon photodiodes [Elektronische Daten] [Chen Bingruo, Huang Qijun, Li Shiqing, Yan Heping, Gao Fanrong, Tang Chenghuan, Xian Meizhi, Yin Deqiang] The relationships between irradiation doses of γ ray and the main photoelectric characteristics of PIN photodiode or conventional photodiode with different structure were studied. The experimental results show that after the photodiodes being irradiated, the photocurrent decreases, especially for short wavelength of light. The dark current of the photodiodes with smaller active area decreases while increases for that with larger active area, and the response time shortens. The plane scanning experiment of laser beam indicates that the homogeneity of the device's surface is not influenced by the irradiation. The results prove that PIN photodiode shows relatively good radioresistance. Springer, 1996 γ irradiation nationallicence photoelectric characteristics nationallicence PIN photodiode nationallicence conventional photodiode nationallicence radiation resistance nationallicence Bingruo Chen Department of Physics, Wuhan University, 430072, Wuhan, China aut Qijun Huang Department of Physics, Wuhan University, 430072, Wuhan, China aut Shiqing Li Department of Physics, Wuhan University, 430072, Wuhan, China aut Heping Yan Department of Physics, Wuhan University, 430072, Wuhan, China aut Fanrong Gao Department of Physics, Wuhan University, 430072, Wuhan, China aut Chenghuan Tang Department of Physics, Wuhan University, 430072, Wuhan, China aut Meizhi Xian Department of Physics, Wuhan University, 430072, Wuhan, China aut Deqiang Yin Department of Physics, Wuhan University, 430072, Wuhan, China aut Wuhan University Journal of Natural Sciences Wuhan University 1/1(1996-03-01), 62-66 1007-1202 1:1<62 1996 1 11859 https://doi.org/10.1007/BF02827582 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02827582 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Bingruo Chen Department of Physics, Wuhan University, 430072, Wuhan, China aut NATIONALLICENCE 700 1- Qijun Huang Department of Physics, Wuhan University, 430072, Wuhan, China aut NATIONALLICENCE 700 1- Shiqing Li Department of Physics, Wuhan University, 430072, Wuhan, China aut NATIONALLICENCE 700 1- Heping Yan Department of Physics, Wuhan University, 430072, Wuhan, China aut NATIONALLICENCE 700 1- Fanrong Gao Department of Physics, Wuhan University, 430072, Wuhan, China aut NATIONALLICENCE 700 1- Chenghuan Tang Department of Physics, Wuhan University, 430072, Wuhan, China aut NATIONALLICENCE 700 1- Meizhi Xian Department of Physics, Wuhan University, 430072, Wuhan, China aut NATIONALLICENCE 700 1- Deqiang Yin Department of Physics, Wuhan University, 430072, Wuhan, China aut NATIONALLICENCE 773 0- Wuhan University Journal of Natural Sciences Wuhan University 1/1(1996-03-01), 62-66 1007-1202 1:1<62 1996 1 11859 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer