caa a22 4500 477088880 CHVBK 20180405111510.0 cr unu---uuuuu 170330e19960301xx s 000 0 eng 10.1007/BF02607938 doi (NATIONALLICENCE)springer-10.1007/BF02607938 Mathematical modeling of laser-induced diffusion processes [Elektronische Daten] [P. Volosevich, E. Levanov, S. Fetisov] The possibility of using lasers to form semiconductor materials (cadmium and mercury tellurides) with a predetermined width of the band gap was explored using mathematical modeling. A one-dimensional physicomathematical model based on diffusion and heat conduction equations and transport equations for laser radiation with temperature- and concentration-dependent coefficients was used. Self-similar solutions were used in order to obtain certain qualitative regularities of the processes. In the general case the corresponding system of partial differential equations was integrated numerically. Plenum Publishing Corporation, 1996 Volosevich P. aut Levanov E. aut Fetisov S. aut Journal of Engineering Physics and Thermophysics Kluwer Academic Publishers-Plenum Publishers 69/2(1996-03-01), 151-161 1062-0125 69:2<151 1996 69 10891 https://doi.org/10.1007/BF02607938 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02607938 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Volosevich P. aut NATIONALLICENCE 700 1- Levanov E. aut NATIONALLICENCE 700 1- Fetisov S. aut NATIONALLICENCE 773 0- Journal of Engineering Physics and Thermophysics Kluwer Academic Publishers-Plenum Publishers 69/2(1996-03-01), 151-161 1062-0125 69:2<151 1996 69 10891 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer