naa a22 4500 510729061 CHVBK 20180411082946.0 cr unu---uuuuu 180411e20130301xx s 000 0 eng 10.1007/s12200-012-0302-x doi (NATIONALLICENCE)springer-10.1007/s12200-012-0302-x Influence of process parameters on band gap of Al-doped ZnO film [Elektronische Daten] [Diqiu Huang, Xiangbin Zeng, Yajuan Zheng, Xiaojin Wang, Yanyan Yang] This paper presents the influence of process parameters, such as argon (Ar) flow rate, sputtering power and substrate temperature on the band gap of Al-doped ZnO film, Al-doped ZnO thin films were fabricated by radio frequency (RF) magnetron sputtering technology and deposited on polyimide and glass substrates. Under different Ar flow rates varied from 30 to 70 sccm, the band gap of thin films were changed from 3.56 to 3.67 eV. As sputtering power ranged from 125 to 200W, the band gap was varied from 3.28 to 3.82 eV; the band gap was between 3.41 and 3.88 eV as substrate temperature increases from 150°C to 300°C. Furthermore, the correlation between carrier concentration and band gap was investigated by HALL. These results demonstrate that the band gap of the Al-doped ZnO thin film can be adjusted by changing the Ar flow rate, sputtering power and substrate temperature, which can improve the performance of semiconductor devices related to Al-doped ZnO thin film. Higher Education Press and Springer-Verlag Berlin Heidelberg, 2013 Al-doped ZnO thin films nationallicence band gap nationallicence carrier concentration nationallicence argon (Ar) flow rate nationallicence sputtering power nationallicence substrate temperature nationallicence Huang Diqiu School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut Zeng Xiangbin School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut Zheng Yajuan School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut Wang Xiaojin School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut Yang Yanyan School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut Frontiers of Optoelectronics SP Higher Education Press 6/1(2013-03-01), 114-121 2095-2759 6:1<114 2013 6 12200 https://doi.org/10.1007/s12200-012-0302-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12200-012-0302-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Huang Diqiu School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Zeng Xiangbin School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Zheng Yajuan School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Wang Xiaojin School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Yang Yanyan School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 773 0- Frontiers of Optoelectronics SP Higher Education Press 6/1(2013-03-01), 114-121 2095-2759 6:1<114 2013 6 12200 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer