naa a22 4500 51072907X CHVBK 20180411082946.0 cr unu---uuuuu 180411e20130301xx s 000 0 eng 10.1007/s12200-012-0300-z doi (NATIONALLICENCE)springer-10.1007/s12200-012-0300-z Scalabilities of LEDs and VCSELs with tunnel-regenerated multi-active region structure [Elektronische Daten] [Xia Guo, Xinxin Luan, Wenjuan Wang, Chunwei Guo, Guangdi Shen] Scalabilities of light-emitting diodes (LEDs) and vertical-cavity surface-emitting lasers (VCSELs) with tunnel-regenerated multi-active-region (TRMAR) structure were investigated. It was found that the output optical power and quantum efficiency of these new LEDs with TRMAR increased with the number of its active regions, but the threshold gain and threshold current density decreased. However, for VCSELs with TRMAR, the differential quantum efficiency and optical power increased with the number of the active region. The results suggest that LEDs and VCSELs with the TRMAR structure have some potential advantages over the conventional LEDs or VCSELs in high internal quantum efficiency, low heat generation, high round-trip gain, and so on. These advantages will make TRMAR LEDs or VCSELs more attractive for the industrial application. Higher Education Press and Springer-Verlag Berlin Heidelberg, 2012 tunnel junction nationallicence cascade nationallicence scalability nationallicence lightemitting diodes (LEDs) nationallicence vertical-cavity surface-emitting lasers (VCSELs) nationallicence Guo Xia Photonic Device Research Laboratory (PDRL), Beijing University of Technology, 100124, Beijing, China aut Luan Xinxin Photonic Device Research Laboratory (PDRL), Beijing University of Technology, 100124, Beijing, China aut Wang Wenjuan Photonic Device Research Laboratory (PDRL), Beijing University of Technology, 100124, Beijing, China aut Guo Chunwei Photonic Device Research Laboratory (PDRL), Beijing University of Technology, 100124, Beijing, China aut Shen Guangdi Photonic Device Research Laboratory (PDRL), Beijing University of Technology, 100124, Beijing, China aut Frontiers of Optoelectronics SP Higher Education Press 6/1(2013-03-01), 97-101 2095-2759 6:1<97 2013 6 12200 https://doi.org/10.1007/s12200-012-0300-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12200-012-0300-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Guo Xia Photonic Device Research Laboratory (PDRL), Beijing University of Technology, 100124, Beijing, China aut NATIONALLICENCE 700 1- Luan Xinxin Photonic Device Research Laboratory (PDRL), Beijing University of Technology, 100124, Beijing, China aut NATIONALLICENCE 700 1- Wang Wenjuan Photonic Device Research Laboratory (PDRL), Beijing University of Technology, 100124, Beijing, China aut NATIONALLICENCE 700 1- Guo Chunwei Photonic Device Research Laboratory (PDRL), Beijing University of Technology, 100124, Beijing, China aut NATIONALLICENCE 700 1- Shen Guangdi Photonic Device Research Laboratory (PDRL), Beijing University of Technology, 100124, Beijing, China aut NATIONALLICENCE 773 0- Frontiers of Optoelectronics SP Higher Education Press 6/1(2013-03-01), 97-101 2095-2759 6:1<97 2013 6 12200 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer