naa a22 4500 510729134 CHVBK 20180411082946.0 cr unu---uuuuu 180411e20130301xx s 000 0 eng 10.1007/s12200-012-0296-4 doi (NATIONALLICENCE)springer-10.1007/s12200-012-0296-4 Structure and microwave properties analysis of substrate removed GaAs/AlGaAs electro-optic modulator structure by finite element method [Elektronische Daten] [Kambiz Abedi, Habib Vahidi] In this paper, structure and microwave properties of a substrate removed GaAs/AlGaAs traveling wave electro-optic modulator structure were analyzed and simulated by using the finite element numerical technique for lower loss, simultaneous matching of optical and microwave velocities and impedance matching with 50 Ω. The effects of core layer thickness, claddings thicknesses, and width of the modulator on the microwave effective index n m were investigated, the characteristic impedance Z C, the microwave losses α, and the half-wave voltage-length product V π L were calculated. The results of the simulation suggest that the electrical bandwidth of 22 GHz and the optical bandwidth of 48 GHz can be obtained for fully matched, lower loss structure, which correspond to a 13 V·cm drive voltage. Higher Education Press and Springer-Verlag Berlin Heidelberg, 2012 electro-optic modulators nationallicence finite element method (FEM) nationallicence integrated optics nationallicence optical communication equipment nationallicence Abedi Kambiz Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, 1983963113, Tehran, Iran aut Vahidi Habib Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, 1983963113, Tehran, Iran aut Frontiers of Optoelectronics SP Higher Education Press 6/1(2013-03-01), 108-113 2095-2759 6:1<108 2013 6 12200 https://doi.org/10.1007/s12200-012-0296-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12200-012-0296-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Abedi Kambiz Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, 1983963113, Tehran, Iran aut NATIONALLICENCE 700 1- Vahidi Habib Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, 1983963113, Tehran, Iran aut NATIONALLICENCE 773 0- Frontiers of Optoelectronics SP Higher Education Press 6/1(2013-03-01), 108-113 2095-2759 6:1<108 2013 6 12200 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer