naa a22 4500 510729207 CHVBK 20180411082946.0 cr unu---uuuuu 180411e20130901xx s 000 0 eng 10.1007/s12200-013-0326-x doi (NATIONALLICENCE)springer-10.1007/s12200-013-0326-x Influence of substrate temperature on in situ -textured ZnO thin films grown by MOCVD [Elektronische Daten] [Yajuan Zheng, Xiangbin Zeng, Xiaohu Sun, Diqiu Huang] The influence of substrate temperature on microstructure, electrical and optical properties of in situtextured zinc oxide (ZnO) films fabricated by metal organic chemical vapor deposition (MOVCD) had been investigated. Results indicated that the substrate temperature played a very important role on preparation of ZnO thin film. With the raising of temperature, firstly ZnO crystals were perpendicular to the substrate, then they were grown inclining toward the substrate, finally ZnO crystals grown in layers but not regular. Consequently, ZnO film surface morphology changed from smooth to a pyramid structure and then disappeared little by little. Moreover, it was also found in this study that ZnO film was characterized with high crystallinity, low resistivity (2.17 × 10−2) and high transmittance (>80%). These results suggested that ZnO thin film is suitable for front electrode of silicon thin film solar cell. Higher Education Press and Springer-Verlag Berlin Heidelberg, 2013 metal organic chemical vapor deposition (MOVCD) nationallicence in situ-textured nationallicence zinc oxide (ZnO) thin film nationallicence temperature nationallicence Zheng Yajuan School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut Zeng Xiangbin School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut Sun Xiaohu School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut Huang Diqiu School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut Frontiers of Optoelectronics Springer Berlin Heidelberg 6/3(2013-09-01), 270-274 2095-2759 6:3<270 2013 6 12200 https://doi.org/10.1007/s12200-013-0326-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12200-013-0326-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zheng Yajuan School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Zeng Xiangbin School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Sun Xiaohu School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Huang Diqiu School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 773 0- Frontiers of Optoelectronics Springer Berlin Heidelberg 6/3(2013-09-01), 270-274 2095-2759 6:3<270 2013 6 12200 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer