naa a22 4500 510729223 CHVBK 20180411082946.0 cr unu---uuuuu 180411e20130901xx s 000 0 eng 10.1007/s12200-013-0328-8 doi (NATIONALLICENCE)springer-10.1007/s12200-013-0328-8 Ground bounce noise reduction aware combinational multi threshold CMOS circuits for nanoscale CMOS multiplier [Elektronische Daten] [Bipin Verma, Shyam Singh, Shyam Akashe] Multi-threshold complementary metal-oxide-semiconductor (MTCMOS) is often used to reduce the leakage current in idle circuit. Ground bounce noise produced during a transition mode (sleep-to-active) is an important challenge in MTCMOS. In this paper, various noise-aware combinational MTCMOS circuit was used to evaluate the ground bounce noise. An intermediate mode was applied in the sleep-to-active mode transition to reduce the charge stored on virtual lines to real ground. The dependence of ground bounce noise on voltage, transistor size and temperature was investigated with different MTCMOS circuit technique. The peak amplitude of ground bounce noise was reduced up to 78.82%. The leakage current of the circuit was decreased up to 99.73% and the active power of the circuit was reduced up to 62.32%. Simulation of multiplier with different MTCMOS circuit techniques was performed on 45 nm CMOS technology. Higher Education Press and Springer-Verlag Berlin Heidelberg, 2013 multi-threshold complementary metal-oxidesemiconductor (MTCMOS) nationallicence mode transition nationallicence ground bounce noise nationallicence sleep transistor nationallicence Verma Bipin Department of Electronics and Communication Engineering, ITM University, 474001, Gwalior (M.P.), India aut Singh Shyam Department of Electronics and Communication Engineering, ITM University, 474001, Gwalior (M.P.), India aut Akashe Shyam Department of Electronics and Communication Engineering, ITM University, 474001, Gwalior (M.P.), India aut Frontiers of Optoelectronics Springer Berlin Heidelberg 6/3(2013-09-01), 327-337 2095-2759 6:3<327 2013 6 12200 https://doi.org/10.1007/s12200-013-0328-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12200-013-0328-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Verma Bipin Department of Electronics and Communication Engineering, ITM University, 474001, Gwalior (M.P.), India aut NATIONALLICENCE 700 1- Singh Shyam Department of Electronics and Communication Engineering, ITM University, 474001, Gwalior (M.P.), India aut NATIONALLICENCE 700 1- Akashe Shyam Department of Electronics and Communication Engineering, ITM University, 474001, Gwalior (M.P.), India aut NATIONALLICENCE 773 0- Frontiers of Optoelectronics Springer Berlin Heidelberg 6/3(2013-09-01), 327-337 2095-2759 6:3<327 2013 6 12200 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer