naa a22 4500 510729312 CHVBK 20180411082946.0 cr unu---uuuuu 180411e20130901xx s 000 0 eng 10.1007/s12200-013-0334-x doi (NATIONALLICENCE)springer-10.1007/s12200-013-0334-x Abedi Kambiz Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, 1983963113, Tehran, Iran aut Strain effects on performance of electroabsorption optical modulators [Elektronische Daten] [Kambiz Abedi] This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asymmetric intra-step-barrier coupled double strained quantum wells (AICD-SQWs) active layer. For this purpose, the electroabsorption coefficient was calculated over a range of AICD-SQWs strain from compressive to tensile strain. Then, the extinction ratio (ER) and insertion loss parameters were evaluated from calculated electroabsorption coefficient for transverse electric (TE) input light polarization. The results of the simulation suggest that the tensile strain from 0.05% to 0.2% strain in the wide quantum well has a significant impact on the ER and insertion loss as compared with compressive strain, whereas the compressive strain of the narrow quantum well from − 0.5% to − 0.7% strain has a more pronounced impact on the improvement of the ER and insertion loss as compared with tensile strain. Higher Education Press and Springer-Verlag Berlin Heidelberg, 2013 asymmetric intra-step-barrier coupled double strained quantum wells (AICD-SQWs) nationallicence electroabsorption modulators nationallicence strain nationallicence insertion loss nationallicence Frontiers of Optoelectronics Springer Berlin Heidelberg 6/3(2013-09-01), 282-289 2095-2759 6:3<282 2013 6 12200 https://doi.org/10.1007/s12200-013-0334-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12200-013-0334-x text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Abedi Kambiz Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, 1983963113, Tehran, Iran aut NATIONALLICENCE 773 0- Frontiers of Optoelectronics Springer Berlin Heidelberg 6/3(2013-09-01), 282-289 2095-2759 6:3<282 2013 6 12200 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer