naa a22 4500 510729320 CHVBK 20180411082946.0 cr unu---uuuuu 180411e20130901xx s 000 0 eng 10.1007/s12200-013-0348-4 doi (NATIONALLICENCE)springer-10.1007/s12200-013-0348-4 High performance of low voltage controlled ring oscillator with reverse body bias technology [Elektronische Daten] [Akansha Shrivastava, Anshul Saxena, Shyam Akashe] In complementary metal oxide semiconductor (CMOS) nanoscale technology, power dissipation is becoming important metric. In this work low leakage voltage controlled ring oscillator circuit system was proposed for critical communication systems with high oscillation frequency. An ideal approach has been presented with substrate biasing technique for reduction of power consumption. The simulation have been completed using cadence virtuoso 45 nm standard CMOS technology at room temperature 27°C with supply voltage V dd = 0.7 V. The simulation results suggest that voltage controlled ring oscillator has characterized with efficient low power voltage controlled oscillator (VCO) in term of minimum leakage power (1.23 nW) and maximum oscillation frequency (4.76 GHz) with joint positive channel metal oxide semiconductor and negative channel metal oxide semiconductor (PMOS and NMOS) reverse substrate bias technique. PMOS, NMOS and joint reverse body bias techniques have been compared in the presented work. Higher Education Press and Springer-Verlag Berlin Heidelberg, 2013 voltage controlled oscillator (VCO) nationallicence leakage power nationallicence active power nationallicence oscillation frequency nationallicence efficiency nationallicence cadence tool nationallicence Shrivastava Akansha Electronics and Communication Department, ITM University, 474001, Gwalior, India aut Saxena Anshul Electronics and Communication Department, ITM University, 474001, Gwalior, India aut Akashe Shyam Electronics and Communication Department, ITM University, 474001, Gwalior, India aut Frontiers of Optoelectronics Springer Berlin Heidelberg 6/3(2013-09-01), 338-345 2095-2759 6:3<338 2013 6 12200 https://doi.org/10.1007/s12200-013-0348-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12200-013-0348-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Shrivastava Akansha Electronics and Communication Department, ITM University, 474001, Gwalior, India aut NATIONALLICENCE 700 1- Saxena Anshul Electronics and Communication Department, ITM University, 474001, Gwalior, India aut NATIONALLICENCE 700 1- Akashe Shyam Electronics and Communication Department, ITM University, 474001, Gwalior, India aut NATIONALLICENCE 773 0- Frontiers of Optoelectronics Springer Berlin Heidelberg 6/3(2013-09-01), 338-345 2095-2759 6:3<338 2013 6 12200 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer