naa a22 4500 510729436 CHVBK 20180411082947.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s12200-013-0342-x doi (NATIONALLICENCE)springer-10.1007/s12200-013-0342-x Improvement of blue InGaN light-emitting diodes with gradually increased barrier heights from n- to p-layers [Elektronische Daten] [Wu Tian, Xiong Hui, Yang Li, Jiangnan Dai, Yanyan Fang, Zhihao Wu, Changqing Chen] The advantages of blue InGaN light-emitting diodes (LED) with the active region of gradually increased barrier heights from n- to p-layers are studied. The energy band diagram, hole concentration, electrostatic field near the electron blocking layer (EBL), and the internal quantum efficiency (IQE) are investigated by Crosslight simulation program. The simulation results show that the structure with gradually increased barrier heights has better performance over the equal one, which can be attributed to the mitigated polarization effect near the interface of the last barrier/EBL due to less interface polarization charges. Moreover, reduced barrier height toward the n-layers is beneficial for holes injection and transportation in the active region. As a result, holes are injected into the active region more efficiently and distributed uniformly in the quantum wells, with which both the IQE and the total lighting power are increased. Although it can lead to the broadening of the spontaneous emission spectrum, the increase is slight such that it has little effect on the application in solid-state lighting. Higher Education Press and Springer-Verlag Berlin Heidelberg, 2013 InGaN nationallicence light-emitting diodes (LED) nationallicence polarization effect nationallicence gradual barrier height nationallicence Tian Wu Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China aut Hui Xiong Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China aut Li Yang Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China aut Dai Jiangnan Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China aut Fang Yanyan Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China aut Wu Zhihao Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China aut Chen Changqing Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China aut Frontiers of Optoelectronics Springer Berlin Heidelberg 6/4(2013-12-01), 429-434 2095-2759 6:4<429 2013 6 12200 https://doi.org/10.1007/s12200-013-0342-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12200-013-0342-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Tian Wu Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Hui Xiong Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Li Yang Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Dai Jiangnan Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Fang Yanyan Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Wu Zhihao Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Chen Changqing Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 773 0- Frontiers of Optoelectronics Springer Berlin Heidelberg 6/4(2013-12-01), 429-434 2095-2759 6:4<429 2013 6 12200 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer