naa a22 4500 510729479 CHVBK 20180411082947.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s12200-013-0321-2 doi (NATIONALLICENCE)springer-10.1007/s12200-013-0321-2 Modelling overall transmitted efficiency at 1550 nm for polymer grating Silicon-on-insulator structure with defect [Elektronische Daten] [G. Palai, T. Dhir, B. Nath, S. Patra] The overall transmitted efficiency at 1550 nm for Nylon-Teflon/Teflon-Nylon (N-T/T-N) grating Silicon-on-insulator (SOI) structure with defect in even and odd position was investigated in this paper. Different types of losses, such as absorption, reflection and diffraction, were considered to find out the overall transmitted efficiency. The absorption loss of both Nylon-Teflon (N-T) and Teflon-Nylon (T-N) structure is zero at the wavelength of 1550 nm. Reflectance of these structures was analyzed by using plane wave expansion (PWE) method. Simulation result showed that reflectance as well as transmittance was varied linearly with respect to defect at odd and even positions. Simulation is also done for the diffraction efficiency at 1550 nm with respect to detuning from Bragg's angle, which was ranged from − 0.4 rad to + 0.4 rad. Finally, it was found that overall transmitted efficiency increased as even defect position varied from 2nd to 10th for both N-T/T-N grating SOI structure. Similarly, the overall transmitted efficiency decreased as odd defect position changed from 3rd to 11th for both N-T/T-N grating SOI structure. Higher Education Press and Springer-Verlag Berlin Heidelberg, 2013 overall transmitted efficiency nationallicence Nylon-Teflon/Teflon-Nylon (N-T/T-N) grating nationallicence plane wave expansion (PWE) nationallicence Silicon-on-insulator (SOI) nationallicence Palai G. Gandhi Institute for Technological Advancement (GITA), 752054, Bhubaneswar, Odisha, India aut Dhir T. Gandhi Institute for Technological Advancement (GITA), 752054, Bhubaneswar, Odisha, India aut Nath B. Gandhi Institute for Technological Advancement (GITA), 752054, Bhubaneswar, Odisha, India aut Patra S. Gandhi Institute for Technological Advancement (GITA), 752054, Bhubaneswar, Odisha, India aut Frontiers of Optoelectronics SP Higher Education Press 6/2(2013-06-01), 153-159 2095-2759 6:2<153 2013 6 12200 https://doi.org/10.1007/s12200-013-0321-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12200-013-0321-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Palai G. Gandhi Institute for Technological Advancement (GITA), 752054, Bhubaneswar, Odisha, India aut NATIONALLICENCE 700 1- Dhir T. Gandhi Institute for Technological Advancement (GITA), 752054, Bhubaneswar, Odisha, India aut NATIONALLICENCE 700 1- Nath B. Gandhi Institute for Technological Advancement (GITA), 752054, Bhubaneswar, Odisha, India aut NATIONALLICENCE 700 1- Patra S. Gandhi Institute for Technological Advancement (GITA), 752054, Bhubaneswar, Odisha, India aut NATIONALLICENCE 773 0- Frontiers of Optoelectronics SP Higher Education Press 6/2(2013-06-01), 153-159 2095-2759 6:2<153 2013 6 12200 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer