naa a22 4500 510729525 CHVBK 20180411082947.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s12200-013-0295-0 doi (NATIONALLICENCE)springer-10.1007/s12200-013-0295-0 Thermal resistance of high power LED on surface modified heat sink [Elektronische Daten] [D. Mutharasu, S. Shanmugan] For 3 W green light emitting diode (LED), the top surface of commercial heat sink was machined with two different shapes (hole and ‘V' shaped) and the thermal performance was tested. The contact surface area of the heat sink was increased by machining process. The observed junction temperature (T J) from transient cooling curve was high for ‘V' shaped surface for all driving currents. Hole shaped surface of heat sink did not influence much on the T J values. In addition, total thermal resistance (R th-tot) was not affected by the hole shpaed surface compared to plain surface. Noticeable increases in T J as well as R th-tot were observed for ‘V' shaped surface for all driving currents (100, 350 and 700 mA). The observed correlated color temperature (CCT) values were high for hole and ‘V' shaped surfaces and the variation in CCT with respect to time was high for all surfaces measured at 700 mA. Increased lux for modified surface at high driving current (700 mA) was also observed. Very small variation in color rendering index (CRI) values could be observed. Higher Education Press and Springer-Verlag Berlin Heidelberg, 2013 light emitting diode (LED) nationallicence surface modification nationallicence transient analysis nationallicence cumulated structure function nationallicence optical properties nationallicence Mutharasu D. Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM), 11800, Pulau Penang, Malaysia aut Shanmugan S. Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM), 11800, Pulau Penang, Malaysia aut Frontiers of Optoelectronics SP Higher Education Press 6/2(2013-06-01), 160-166 2095-2759 6:2<160 2013 6 12200 https://doi.org/10.1007/s12200-013-0295-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12200-013-0295-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Mutharasu D. Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM), 11800, Pulau Penang, Malaysia aut NATIONALLICENCE 700 1- Shanmugan S. Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM), 11800, Pulau Penang, Malaysia aut NATIONALLICENCE 773 0- Frontiers of Optoelectronics SP Higher Education Press 6/2(2013-06-01), 160-166 2095-2759 6:2<160 2013 6 12200 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer