naa a22 4500 510729592 CHVBK 20180411082947.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s12200-013-0317-y doi (NATIONALLICENCE)springer-10.1007/s12200-013-0317-y SAGCM avalanche photodiode with additional layer and nonuniform electric field [Elektronische Daten] [Abbas Ghadimi, Vahid Ahmadi, Fatemeh Shahshahani] This paper presents a new method to increase the speed of the separated absorption, grading, charge, and multiplication avalanche photodiode (SAGCM-APD). This improvement is obtained by adding a new thin charge layer between absorption and grading layers, with assuming the non-uniform electric field in different regions of the structure. In addition, a circuit model of the proposed structure is extracted, using carrier rate equations. Also, to achieve the optimum structure, it is tried to have trade-offs among thickness of the layers and have proper tuning of physical parameters. Eventually, frequency and transient response are investigated and it is shown that, in comparison with the previous conventional structure, significant improvements in gain-bandwidth product, speed and also in breakdown voltage are attained. Higher Education Press and Springer-Verlag Berlin Heidelberg, 2013 separated absorption grading charge multiplication avalanche photodiode (SAGCM-APD) nationallicence electric field nonuniformity nationallicence additional charge layer nationallicence Ghadimi Abbas Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, 145151775, Tehran, Iran aut Ahmadi Vahid Department of Electrical Engineering, Tarbiat Modares University, 14115-194, Tehran, Iran aut Shahshahani Fatemeh Department of Physics, Alzahra University, 1993893973, Tehran, Iran aut Frontiers of Optoelectronics SP Higher Education Press 6/2(2013-06-01), 199-209 2095-2759 6:2<199 2013 6 12200 https://doi.org/10.1007/s12200-013-0317-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12200-013-0317-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ghadimi Abbas Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, 145151775, Tehran, Iran aut NATIONALLICENCE 700 1- Ahmadi Vahid Department of Electrical Engineering, Tarbiat Modares University, 14115-194, Tehran, Iran aut NATIONALLICENCE 700 1- Shahshahani Fatemeh Department of Physics, Alzahra University, 1993893973, Tehran, Iran aut NATIONALLICENCE 773 0- Frontiers of Optoelectronics SP Higher Education Press 6/2(2013-06-01), 199-209 2095-2759 6:2<199 2013 6 12200 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer