naa a22 4500 510729614 CHVBK 20180411082947.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s12200-013-0324-z doi (NATIONALLICENCE)springer-10.1007/s12200-013-0324-z Improved photovoltaic properties of Si quantum dots/SiC multilayers-based heterojunction solar cells by reducing tunneling barrier thickness [Elektronische Daten] [Yun-Qing Cao, Xin Xu, Shu-Xin Li, Wei Li, Jun Xu, Kunji Chen] Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC stacked structures prepared in plasma enhanced chemical vapor deposition (PECVD) system. The microstructures were examined by transmission electron microscopy (TEM) and Raman spectroscopy, and results demonstrate the formation of Si QDs. Moreover, p-i-n devices containing Si QDs/SiC multilayers were fabricated, and their photovoltaic property was investigated. It was found that these devices show the good spectral response in a wide wavelength range (400-1200 nm). And it was also observed that by reducing the thickness of SiC layer from 4 to 2 nm, the external quantum efficiency was obviously enhanced and the short circuit current density (J sc) was increased from 17.5 to 28.3 mA/cm2, indicating the collection efficiency of photo-generated carriers was improved due to the reduced SiC barriers. Higher Education Press and Springer-Verlag Berlin Heidelberg, 2013 Si quantum dots (Si QDs) nationallicence SiC multilayer nationallicence solar cells nationallicence transmission electron microscopy (TEM) nationallicence Raman spectroscopy nationallicence Cao Yun-Qing School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, 210093, Nanjing, China aut Xu Xin School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, 210093, Nanjing, China aut Li Shu-Xin School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, 210093, Nanjing, China aut Li Wei School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, 210093, Nanjing, China aut Xu Jun School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, 210093, Nanjing, China aut Chen Kunji School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, 210093, Nanjing, China aut Frontiers of Optoelectronics SP Higher Education Press 6/2(2013-06-01), 228-233 2095-2759 6:2<228 2013 6 12200 https://doi.org/10.1007/s12200-013-0324-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12200-013-0324-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Cao Yun-Qing School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Xu Xin School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Li Shu-Xin School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Li Wei School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Xu Jun School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Chen Kunji School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 773 0- Frontiers of Optoelectronics SP Higher Education Press 6/2(2013-06-01), 228-233 2095-2759 6:2<228 2013 6 12200 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer