naa a22 4500 510766714 CHVBK 20180411083159.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s12043-013-0532-5 doi (NATIONALLICENCE)springer-10.1007/s12043-013-0532-5 Durability of rewritable phase-change Ge X Sb Y Te1 −  X  −  Y memory devices [Elektronische Daten] [N REDDY, Ch BAPANAYYA, RAJEEV GUPTA, S AGARWAL] The bond constraint theory (BCT) dealing with the rigidity caused by bond constraints and the long-range potential fluctuations (LRPF) arising from the defects and heterogeneities in the disordered semiconductors are important for understanding the atomic and electronic properties of amorphous semiconductors.Here, they are applied to the already commercialized Ge X Sb Y Te1 − X − Y (GST) chalcogenide glasses used in the rewritable phase change memory (PCM) devices. The main concern at present is to improve their ability to withstand a large number of phase change cycles, by choosing the right composition. The two considerations (BCT and LRPF) are briefly described and tested on the most commonly used Ge2Sb2Te5 and the nearby compositions. While these considerations provide significant insight into their atomic and electronic structures, the ansatz linking them with the durability of the PCM devices need to be justified by more work. Indian Academy of Sciences, 2013 Chalcogenide glasses nationallicence extended X-ray absorption fine structure nationallicence bond constraint theory nationallicence thermopower nationallicence long-range potential fluctuations nationallicence REDDY N. Department of Physics, Indian Institute of Technology Kanpur, 208 016, Kanpur, India aut BAPANAYYA Ch Materials Science Programme, Indian Institute of Technology Kanpur, 208 016, Kanpur, India aut GUPTA RAJEEV Department of Physics, Indian Institute of Technology Kanpur, 208 016, Kanpur, India aut AGARWAL S. Department of Physics, Indian Institute of Technology Kanpur, 208 016, Kanpur, India aut Pramana Springer-Verlag 80/6(2013-06-01), 1065-1081 0304-4289 80:6<1065 2013 80 12043 https://doi.org/10.1007/s12043-013-0532-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12043-013-0532-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- REDDY N. Department of Physics, Indian Institute of Technology Kanpur, 208 016, Kanpur, India aut NATIONALLICENCE 700 1- BAPANAYYA Ch Materials Science Programme, Indian Institute of Technology Kanpur, 208 016, Kanpur, India aut NATIONALLICENCE 700 1- GUPTA RAJEEV Department of Physics, Indian Institute of Technology Kanpur, 208 016, Kanpur, India aut NATIONALLICENCE 700 1- AGARWAL S. Department of Physics, Indian Institute of Technology Kanpur, 208 016, Kanpur, India aut NATIONALLICENCE 773 0- Pramana Springer-Verlag 80/6(2013-06-01), 1065-1081 0304-4289 80:6<1065 2013 80 12043 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer