naa a22 4500 510767362 CHVBK 20180411083201.0 cr unu---uuuuu 180411e20130201xx s 000 0 eng 10.1007/s12043-012-0463-6 doi (NATIONALLICENCE)springer-10.1007/s12043-012-0463-6 Effect of Al doping on microstructure and optical band gap of ZnO thin film synthesized by successive ion layer adsorption and reaction [Elektronische Daten] [S MONDAL, S BHATTACHARYYA, P MITRA] Thin films of pure and aluminum-doped zinc oxide (AZO) were deposited on glass substrates from ammonium zincate bath following a chemical dipping technique called successive ion layer adsorption and reaction (SILAR). Characterization techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive X-rays (EDX) were used to investigate the effect of Al doping on the microstructure of AZO films. Particle size analysis using X-ray line broadening shows marginally increasing trend with increasing Al impurity. The average particle size for pure ZnO is 22.75 nm. It increases to 24.26 nm for 1% AZO film and 25.13 nm for 2% AZO film. Incorporation of Al was confirmed from elemental analysis using EDX. SEM micrograph shows that pure ZnO particles are spherical shaped. However, AZO films show particles with off-spherical shape with compact interconnected grains. The value of band gap for pure ZnO is 3.229 eV and it increases to 3.29 eV for 1% AZO indicating a blue-shift for 1% AZO film. However, for 2% AZO film, a decrease in band gap compared to pure ZnO is observed indicating a red-shift of fundamental absorption edge. Electrical resistance shows an initial decrease with increasing Al content. With further enhancement of Al incorporation, the resistance increases. Indian Academy of Sciences, 2012 Successive ion layer absorption and reaction nationallicence Al:ZnO thin films nationallicence microstructure nationallicence particle size nationallicence scanning electron microscopy nationallicence optical band gap nationallicence MONDAL S. Department of Physics, The University of Burdwan, Rajbati, 713 104, Bardhaman, Burdwan, India aut BHATTACHARYYA S. Surface Physics Division, Saha Institute of Nuclear Physics, 1/AF, Bidhan Nagar, 700 064, Kolkata, India aut MITRA P. Department of Physics, The University of Burdwan, Rajbati, 713 104, Bardhaman, Burdwan, India aut Pramana Springer-Verlag 80/2(2013-02-01), 315-326 0304-4289 80:2<315 2013 80 12043 https://doi.org/10.1007/s12043-012-0463-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12043-012-0463-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- MONDAL S. Department of Physics, The University of Burdwan, Rajbati, 713 104, Bardhaman, Burdwan, India aut NATIONALLICENCE 700 1- BHATTACHARYYA S. Surface Physics Division, Saha Institute of Nuclear Physics, 1/AF, Bidhan Nagar, 700 064, Kolkata, India aut NATIONALLICENCE 700 1- MITRA P. Department of Physics, The University of Burdwan, Rajbati, 713 104, Bardhaman, Burdwan, India aut NATIONALLICENCE 773 0- Pramana Springer-Verlag 80/2(2013-02-01), 315-326 0304-4289 80:2<315 2013 80 12043 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer