naa a22 4500 510767710 CHVBK 20180411083202.0 cr unu---uuuuu 180411e20130901xx s 000 0 eng 10.1007/s12043-013-0586-4 doi (NATIONALLICENCE)springer-10.1007/s12043-013-0586-4 Performance assessment of nanoscale Schottky MOSFET as resonant tunnelling device: Non-equilibrium Green's function formalism [Elektronische Daten] [ZAHRA AHANGARI, MORTEZA FATHIPOUR] A comprehensive study is performed on the electrical characteristics of Schottky barrier MOSFET (SBMOSFET) in nanoscale regime, by employing the non-equilibrium Green's function (NEGF) approach. Quantum confinement results in the enhancement of effective Schottky barrier height (SBH). High enough Schottky barriers at the source/drain and the channel form a double barrier profile along the channel that results in the formation of resonance states. We have, for the first time, proposed a resonant tunnelling device based on SBMOSFET in which multiple resonance states are modulated by the gate voltage. Role of essential factors such as temperature, SBH, bias voltage and structural parameters on the feasibility of this device for silicon-based resonant tunnelling applications are extensively studied. Resonant tunnelling appears at low temperatures and low drain voltages and as a result negative differential resistance (NDR) is apparent in the transfer characteristic. Scaling down the gate length to 6nm increases the peak-to-valley ratio (PVR) of the drain current. As the effective SBH reduces, the curvature of the double barrier profile is gradually diminished. Therefore, multiple resonant states are contributed to the current and consequently resonant tunnelling is smoothed out. Indian Academy of Sciences, 2013 Schottky MOSFET nationallicence quantum transport nationallicence non-equlibrium Green's function nationallicence resonant tunnelling nationallicence mode space approach nationallicence AHANGARI ZAHRA Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran aut FATHIPOUR MORTEZA School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran aut Pramana Springer India 81/3(2013-09-01), 511-520 0304-4289 81:3<511 2013 81 12043 https://doi.org/10.1007/s12043-013-0586-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12043-013-0586-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- AHANGARI ZAHRA Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran aut NATIONALLICENCE 700 1- FATHIPOUR MORTEZA School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran aut NATIONALLICENCE 773 0- Pramana Springer India 81/3(2013-09-01), 511-520 0304-4289 81:3<511 2013 81 12043 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer