naa a22 4500 510771092 CHVBK 20180411083213.0 cr unu---uuuuu 180411e20130301xx s 000 0 eng 10.1007/s11837-012-0540-9 doi (NATIONALLICENCE)springer-10.1007/s11837-012-0540-9 Behavior of Vacancies and Interstitials at Semicoherent Interfaces [Elektronische Daten] [Kedarnath Kolluri, Michael Demkowicz, Richard Hoagland, Xiang-Yang Liu] Using atomistic simulations on a model semicoherent interface, we show that the formation, migration, and clustering of vacancies and interstitials at semicoherent interfaces depend on the structure of the misfit dislocation network of the interface. Interfacial point defects trap at misfit dislocation intersections and migrate from one intersection to another along misfit dislocations by a multistage process. Interfacial point defect clusters are thermodynamically less stable than individual defects and the largest cluster size depends on the spacing between misfit dislocation intersections. Our results show that the behavior of interfacial point defects is intimately connected to interface structure. TMS, 2013 Kolluri Kedarnath Department of Materials Science and Engineering, Massachusetts Institute of Technology, 02139, Cambridge, MA, USA aut Demkowicz Michael Department of Materials Science and Engineering, Massachusetts Institute of Technology, 02139, Cambridge, MA, USA aut Hoagland Richard MST-8, Materials Science in Radiation and Dynamic Extremes, Los Alamos National Laboratory, 87545, Los Alamos, NM, USA aut Liu Xiang-Yang MST-8, Materials Science in Radiation and Dynamic Extremes, Los Alamos National Laboratory, 87545, Los Alamos, NM, USA aut JOM Springer US; http://www.springer-ny.com 65/3(2013-03-01), 374-381 1047-4838 65:3<374 2013 65 11837 https://doi.org/10.1007/s11837-012-0540-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11837-012-0540-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kolluri Kedarnath Department of Materials Science and Engineering, Massachusetts Institute of Technology, 02139, Cambridge, MA, USA aut NATIONALLICENCE 700 1- Demkowicz Michael Department of Materials Science and Engineering, Massachusetts Institute of Technology, 02139, Cambridge, MA, USA aut NATIONALLICENCE 700 1- Hoagland Richard MST-8, Materials Science in Radiation and Dynamic Extremes, Los Alamos National Laboratory, 87545, Los Alamos, NM, USA aut NATIONALLICENCE 700 1- Liu Xiang-Yang MST-8, Materials Science in Radiation and Dynamic Extremes, Los Alamos National Laboratory, 87545, Los Alamos, NM, USA aut NATIONALLICENCE 773 0- JOM Springer US; http://www.springer-ny.com 65/3(2013-03-01), 374-381 1047-4838 65:3<374 2013 65 11837 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer