naa a22 4500 510791646 CHVBK 20180411083321.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11277-012-0805-1 doi (NATIONALLICENCE)springer-10.1007/s11277-012-0805-1 Leakage Current Reduction Techniques for 7T SRAM Cell in 45nm Technology [Elektronische Daten] [Shyam Akashe, Sanjay Sharma] In this paper the impact of gate leakage on 7T static random access memory (SRAM) is described and three techniques for reducing gate leakage currents and sub threshold leakage currents are examined. In first technique, the supply voltage is decreased. In the second techniques the voltage of the ground node is increased. While in third technique the effective voltage across SRAM cell Vd = 0.348V and Vs = 0.234V are observed. In all the techniques the effective voltage across SRAM cell is decreased in stand-by mode using a dynamic self controllable voltage level (SVL) switch. Simulation results based on cadence tool for 45nm technology show that the techniques in which supply voltage level is reduced is more efficient in reducing gate leakage than the one in which ground node voltage is increased. Result obtained show that 437 FA reductions in the leakage currents of 7T SRAM can be achieved. Springer Science+Business Media, LLC., 2012 CMOS nationallicence Gate leakage current nationallicence Sub threshold current nationallicence Voltage level switch nationallicence SRAM nationallicence Stand-by power nationallicence Akashe Shyam Department of Electronics & Communication Engineering, Thapar University, Patiala, Punjab, India aut Sharma Sanjay Department of Electronics & Communication Engineering, Thapar University, Patiala, Punjab, India aut Wireless Personal Communications Springer US; http://www.springer-ny.com 71/1(2013-07-01), 123-136 0929-6212 71:1<123 2013 71 11277 https://doi.org/10.1007/s11277-012-0805-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11277-012-0805-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Akashe Shyam Department of Electronics & Communication Engineering, Thapar University, Patiala, Punjab, India aut NATIONALLICENCE 700 1- Sharma Sanjay Department of Electronics & Communication Engineering, Thapar University, Patiala, Punjab, India aut NATIONALLICENCE 773 0- Wireless Personal Communications Springer US; http://www.springer-ny.com 71/1(2013-07-01), 123-136 0929-6212 71:1<123 2013 71 11277 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer